DocumentCode :
1980378
Title :
Two-stage crystallization process in Ge2Sb2Te5 alloys
Author :
Morales-Sánchez, E. ; Hernández-Landaverde, M.A. ; Prokhorov, E. ; Trapaga, G. ; González-Hernández, J.
Author_Institution :
CICATA- IPN, Unidad Queretaro, Queretaro
fYear :
2008
fDate :
12-14 Nov. 2008
Firstpage :
475
Lastpage :
477
Abstract :
The aim of this work is to investigate the amorphous-to-crystalline phase transformation process in Ge2Sb2Te5 ternary alloys. The experiments were carried out using impedance and X-ray diffraction measurements. The results have shown that the crystallization process in an amorphous Ge2Sb2Te5 alloy starts from nuclei, which appear below Tc and which were identified as the crystalline Ge1Sb4Te7. As the temperature increases above Tc these nuclei were transformed into fcc-Ge2Sb2Te5 crystals. In order to establish the mechanism of crystallization for this system, the Brugerman effective medium approximation was implemented to analyze nucleation and growth of the two stage involved (i.e., metastable Ge1Sb4Te7 and stable Ge2Sb2Te5) through impedance measurements. The results of the simulations demonstrate a close agreement with experimental ones showing that phase transformation in Ge2Sb2Te5 is carried in two steps.
Keywords :
X-ray diffraction; antimony alloys; crystal structure; crystallisation; differential scanning calorimetry; electric impedance measurement; germanium alloys; nucleation; sputter deposition; tellurium alloys; vacuum deposition; Brugerman effective medium approximation; Ge2Sb2Te5; GeSb4Te7; X-ray diffraction measurement; amorphous-crystalline transformation; crystal growth; crystallization mechanism; crystallization nucleation; fcc crystal structure; impedance measurement; metastable crystalline state; two stage crystallization process; Amorphous materials; Automatic control; Crystallization; Electric variables measurement; Impedance measurement; Nuclear measurements; Resistance heating; Temperature; Volume measurement; X-ray diffraction; Phase transformation; amorphous films; crystallization process;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-2498-6
Electronic_ISBN :
978-1-4244-2499-3
Type :
conf
DOI :
10.1109/ICEEE.2008.4723365
Filename :
4723365
Link To Document :
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