Title :
Control of operating wavelength and linewidth in LWIR InAs/InGaAs dots-in-a-well detectors
Author :
Raghavan, S. ; von Winckel, G. ; Rotella, P. ; Stintz, A. ; Krishna, S.
Author_Institution :
Electron. Eng. & Coput. Sci. Dept., New Mexico Univ., Albuquerque, NM, USA
Abstract :
In this paper, The detectors consist of a ten stack InAs/In/sub 0.15/Ga/sub 0.85/As DWELL active region and were grown in a solid-source MBE reactor. From an analysis of the photoluminescence spectra, we attribute this peak to a transition from a state in the dot to a state in the well. In order to increase the operating wavelength of the detector, the effect of two parameters, namely the well width and the substrate temperature during the growth of the dots (T/sub g/), were investigated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photoluminescence; quantum well devices; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; InAs-InGaAs; LWIR InAs/InGaAs dots-well detectors; linewidth; molecular beam epitaxial growth; photoluminescence spectra; substrate temperature; Cameras; Chemical technology; Detectors; Gallium arsenide; Indium gallium arsenide; Night vision; Photoluminescence; Quantum dots; Shape control; Spectroscopy;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226877
