DocumentCode :
1980440
Title :
Photoluminescence Mapping of AIGaAs/GaAs HBT Layer Sequences
Author :
Tews, H. ; Neumann, R. ; Zwicknagl, P.
Author_Institution :
SIEMENS Research Laboratories, Federal Republic of Germany
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
212
Lastpage :
213
Keywords :
Annealing; Doping; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Luminescence; Photoluminescence; Qualifications; Spectroscopy; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665022
Filename :
665022
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1980440
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