Title :
Influence of surface structure on electrical characteristics in SiC MESFETs
Author :
Ho-Young Cha ; Thomas, C.I. ; Eastman, L.F. ; Spencer, M.G.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
In this paper, the influence of surface structure on SiC MESFETs has been studied by investigating electrical characteristics, such as DC, small signal, and large signal characteristics. Three different structures have been fabricated and compared with each other:channel-recessed, gate-recessed, and buried gate structures.
Keywords :
power MESFET; semiconductor epitaxial layers; silicon compounds; surface structure; wide band gap semiconductors; DC; SiC; SiC MESFETs; buried gate structures; channel-recessed structures; electrical properties; gate-recessed structures; large signal; small signal; surface structure; Electric variables; MESFETs; Passivation; Performance evaluation; Power generation; Power measurement; Radio frequency; Silicon carbide; Surface structures; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226880
