• DocumentCode
    1980478
  • Title

    Surface morphology and photoluminescence for InAs quantum dots of different growth temperature and capping layer

  • Author

    Tzeng, T.E. ; Feng, David J. ; Chen, C.Y. ; Lay, T.S. ; Chang, T.Y.

  • Author_Institution
    Inst. of Electro-Optical Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    294
  • Lastpage
    296
  • Abstract
    InAs QDs of eight different grown temperatures are measured by AFM and photoluminescence measurement. PL emission peak at 1.306 mum was obtained for InAs QDs with In0.1Ga0.9As capping layer grown at 510degC
  • Keywords
    III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; surface morphology; 1.306 mum; 510 degC; AFM; InAs quantum dots; InAs-InGaAs; capping layer; growth temperature; molecular beam epitaxy; photoluminescence; surface morphology; Atomic layer deposition; Buffer layers; Gallium arsenide; Photoluminescence; Quantum dots; Surface morphology; Temperature measurement; Temperature sensors; Threshold current; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634172
  • Filename
    1634172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980478