Title :
Surface morphology and photoluminescence for InAs quantum dots of different growth temperature and capping layer
Author :
Tzeng, T.E. ; Feng, David J. ; Chen, C.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Inst. of Electro-Optical Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
InAs QDs of eight different grown temperatures are measured by AFM and photoluminescence measurement. PL emission peak at 1.306 mum was obtained for InAs QDs with In0.1Ga0.9As capping layer grown at 510degC
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; surface morphology; 1.306 mum; 510 degC; AFM; InAs quantum dots; InAs-InGaAs; capping layer; growth temperature; molecular beam epitaxy; photoluminescence; surface morphology; Atomic layer deposition; Buffer layers; Gallium arsenide; Photoluminescence; Quantum dots; Surface morphology; Temperature measurement; Temperature sensors; Threshold current; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634172
