Title :
Optical and structural properties of metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates
Author :
Gozu, Shin-ichiro ; Ueta, Akio ; Yamamoto, Naokatsu ; Akahane, Kouichi ; Ohtani, Naoki ; Tsuchiya, Masahiro
Author_Institution :
Div. of Basic & Adv. Res., National Inst. of Information & Commun. Technol., Tokyo
Abstract :
Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs. The M-MQWs were evaluated by X-ray diffraction, photoluminescence and polarity dependent optical absorption measurements. These measurements revealed that M-MQWs had good structural and optical qualities. M-MQWs with high sheet carrier densities (ges 1012/cm2) clearly showed absorptions in TM polarized light corresponding to intersubband transitions (ISBTs). Therefore, the M-MQWs can be applied to ultra fast optical modulators using the ISBTs
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; band structure; carrier density; gallium arsenide; indium compounds; infrared spectra; light polarisation; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; GaAs; GaAs substrates; InGaAs-AlAsSb; TM polarized light; X-ray diffraction; intersubband transition; metamorphic InGaAs/AlAsSb multiple quantum wells; optical properties; photoluminescence; polarity dependent optical absorption; sheet carrier density; structural properties; ultrafast optical modulators; Electromagnetic wave absorption; Gallium arsenide; Indium gallium arsenide; Optical modulation; Optical signal processing; Photoluminescence; Quantum well devices; Substrates; X-ray diffraction; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634173
