Title :
Spinodal decomposition in the GaSbxNyAs1−x−y alloys
Author :
Albarran, Salvador F D ; Noguez, Alicia G G ; Elyukhin, Vyacheslav A. ; Peralta, Patricia R.
Author_Institution :
Dept. of Eng. in Comput., ESIME-IPN, Mexico City
Abstract :
Spinodal decomposition of the GaSbxNyAs1-x-y quaternary alloys lattice-matched to the GaAs as the result of the internal deformation and coherency strain energies is described. The alloys are represented as quasiternary regular solutions. The internal deformation energy is presented by the interaction parameters between the constituent compounds estimated within the framework of the valence force field model. Ranges of spinodal decomposition of the GaSbxNyAs1-x-y alloys up to yles0.035 with and without coherency strain energy are demonstrated.
Keywords :
III-V semiconductors; antimony alloys; arsenic alloys; crystal structure; deformation; gallium alloys; internal stresses; lattice constants; segregation; spinodal decomposition; substrates; GaAs; GaAs substrate; GaSbxNyAs1-x-y; coherency strain energy; interaction parameters; internal deformation energy; lattice matching; quasiternary regular solutions; quaternary alloys; spinodal decomposition; valence force field model; Atomic layer deposition; Automatic control; Capacitive sensors; Deformable models; Gallium arsenide; III-V semiconductor materials; Lattices; Nitrogen; Photonic band gap; Strain control; III–V quaternary alloys; Spinodal decomposition range;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-2498-6
Electronic_ISBN :
978-1-4244-2499-3
DOI :
10.1109/ICEEE.2008.4723368
