Title :
MBE growth and characterization of highly tensile-strained InGaAs/InGaAlAs multi-quantum well for 1.3 /spl mu/m laser diodes
Author :
Kim, J.M. ; Park, C.Y. ; Nam, S.Y. ; Lee, Y.T.
Author_Institution :
Dept. of Information & Commun., Gwangju Inst. of Sci. & Technol.
Abstract :
Highly tensile-strained InGaAs/InGaAlAs MQW was grown by MBE using the digital-alloy technique. Two peaks corresponding to electron-light hole transition (E1-LH1) and electron-heavy hole transition (E1-HH1) were clearly observed in the PL spectrum of MQW structure
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; stress effects; 1.3 mum; E1-HH1 transition; E1-LH1 transition; InGaAs-InGaAlAs; MBE growth; digital-alloy technique; electron-heavy hole transition; electron-light hole transition; highly tensile-strained InGaAs/InGaAlAs multi-quantum well; laser diodes; photoluminescence; Conducting materials; Diode lasers; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Quantum well devices; Temperature; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634174
