DocumentCode
1980532
Title
Fourth-harmonic Generation at Crystalline Si(001) Interfaces
Author
Lee, Yi-Shu ; Downer, M.C.
Author_Institution
Dept. of Phys., Texas Univ., Austin, TX, USA
fYear
1998
fDate
8-8 May 1998
Firstpage
214
Lastpage
215
Abstract
Summary form only given. We previously reported optical fourth-harmonic generation (FHG) in reflection from a GaAs(001) surface using 200-fs pulses, well below the damage threshold.´ The data revealed a strong fourfold anisotropic surface-specific polarization that is not present in second-harmonic generation (SHG) and that, surprisingly, was nearly as strong as the dipole-allowed, twofold anisotropic contribution from the noncentrosymmetric bulk. The unusual relative strength of the surface FH contribution suggested that surface-specific FHG could be observed by itself in reflection from a centrosymmetric crystal. In this work, we demonstrate azimuthally anisotropic FHG from a crystalline Si(OO1) interface using 5-pJ, 200-fs pulses at fluences >5X below the damage threshold. Our data indicate that the surface dipole FH contribution dominates over the bulk quadrupole FH contribution much more strongly than for the corresponding SHG contributions, thus making FHG from Si(OO1) one of the most purely surface-specific optical probes ever reported.
Keywords
optical focusing; optical harmonic generation; silicon; spectroscopy; surface phenomena; symmetry; FH spectroscopy; FHG; Si; extremely short escape depth; fundamental pulse energy; optical fourth-harmonic generation; shorter pulse sources; surface contribution; symmetry; Crystallization; Gallium arsenide; Gratings; Luminescence; Optical films; Optical surface waves; Plasmons; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-541-2
Type
conf
DOI
10.1109/IQEC.1998.680454
Filename
680454
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