Title :
High mobility poly-Ge TFTs on flexible plastic fabricated at 130/spl deg/C
Author :
Shahrjerdi, D. ; Hekmatshoar, B. ; Mohajerzadeh, S.S. ; Khakifirooz, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tehran Univ., Iran
Abstract :
In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm/sup 2//Vs are fabricated on flexible PET substrates. Process temperature is kept below 130/spl deg/C, taking advantage of a novel stress-assisted crystallization technique.
Keywords :
Hall mobility; cracks; crystallisation; elemental semiconductors; germanium; hole mobility; internal stresses; semiconductor thin films; surface morphology; thin film transistors; 130 degC; Ge; Ge TFT; flexible polymer substrates; hole mobility; stress-assisted crystallization; Compressive stress; Copper; Crystallization; Plastics; Positron emission tomography; Substrates; Temperature; Tensile strain; Tensile stress; Thermomechanical processes;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226884
