Influence of wafer symmetry on the dynamic parameters of rectangular plates

Author

Pentovelis, Georgios ; Boudy, Caroline ; Jeannerot, Véronique

Author_Institution

Telelec Temex Components, Pont Sainte Marie, France

Volume

1

fYear

1999

fDate

1999

Firstpage

453

Abstract

During the manufacture of rectangular resonators, we have shown the necessity of accurately determining the acceptable tolerances for surface flatness and parallelism of the raw material, in this case an AT cut wafer 38.1×38.1 mm. To this end, we have investigated the dynamic parameter variations of finished units as a function of different levels of surface parallelism. Initially the wafers are plane-parallel, hence we introduced a change of parallelism by chemical etching. Different evolutions of impedance, inductance, Q-factor and unwanted modes in relation to the main mode due to the angular error caused by loss of parallelism in both directions X and Z are discussed

Keywords

Q-factor; crystal resonators; inductance; surface topography; symmetry; 38.1 mm; AT cut wafer; Q-factor; chemical etching; dynamic parameter variations; impedance; inductance; rectangular plates; rectangular resonators; surface flatness; surface parallelism; unwanted modes; wafer symmetry; Chemicals; Electrodes; Etching; Inductance; Manufacturing; Q factor; Raw materials; Surface finishing; Surface impedance; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European

Conference_Location

Besancon

ISSN

1075-6787

Print_ISBN

0-7803-5400-1

Type

conf

DOI

10.1109/FREQ.1999.840804

Filename

840804