DocumentCode
1980558
Title
Carrier dynamics of thin Zno epifilm above band-gap states
Author
Ou, Po-Chi ; Lin, Ja-Hon ; Chang, C.A. ; Liu, W.-R. ; Hsieh, Wen-Feng
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
Ultrafast carrier dynamics of ZnO epifilm were investigated by the pump probe measurement. Relative fast occurring and recovery of band gap renormalization following the band filling effect will result in transmission change at 362 nm.
Keywords
II-VI semiconductors; energy gap; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; band filling effect; band gap renormalization; band-gap states; pump probe measurement; thin epifilm; ultrafast carrier dynamics; wavelength 362 nm; Absorption; Excitons; Laser excitation; Photonic band gap; Probes; Pump lasers; Temperature; Transistors; Ultrafast optics; Zinc oxide; ZnO; carrier dynamics; pump-probe;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292596
Filename
5292596
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