DocumentCode :
1980558
Title :
Carrier dynamics of thin Zno epifilm above band-gap states
Author :
Ou, Po-Chi ; Lin, Ja-Hon ; Chang, C.A. ; Liu, W.-R. ; Hsieh, Wen-Feng
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Ultrafast carrier dynamics of ZnO epifilm were investigated by the pump probe measurement. Relative fast occurring and recovery of band gap renormalization following the band filling effect will result in transmission change at 362 nm.
Keywords :
II-VI semiconductors; energy gap; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; band filling effect; band gap renormalization; band-gap states; pump probe measurement; thin epifilm; ultrafast carrier dynamics; wavelength 362 nm; Absorption; Excitons; Laser excitation; Photonic band gap; Probes; Pump lasers; Temperature; Transistors; Ultrafast optics; Zinc oxide; ZnO; carrier dynamics; pump-probe;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292596
Filename :
5292596
Link To Document :
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