Title :
Improved power linearity of InGaP/GaAs HBTs by collector doping design
Author :
Yue-ming Hsin ; Ze-Ming Wang ; Hsu, H.T. ; Tang, W.B. ; Pan, C.T. ; Ho, Y.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.
Keywords :
III-V semiconductors; capacitance; doping profiles; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor doping; InGaP-GaAs; InGaP/GaAs HBTs; nonlinear base-collector capacitance; nonuniform collector doping profile; power linearity; Analytical models; Capacitance; Capacitors; Circuit simulation; Doping profiles; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Medical simulation; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226886
