DocumentCode
1980566
Title
Improved power linearity of InGaP/GaAs HBTs by collector doping design
Author
Yue-ming Hsin ; Ze-Ming Wang ; Hsu, H.T. ; Tang, W.B. ; Pan, C.T. ; Ho, Y.L.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fYear
2003
fDate
23-25 June 2003
Firstpage
89
Lastpage
90
Abstract
In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.
Keywords
III-V semiconductors; capacitance; doping profiles; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor doping; InGaP-GaAs; InGaP/GaAs HBTs; nonlinear base-collector capacitance; nonuniform collector doping profile; power linearity; Analytical models; Capacitance; Capacitors; Circuit simulation; Doping profiles; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Medical simulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226886
Filename
1226886
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