Title :
Sub-threshold characteristics of the 0.2 /spl mu/m capless InP/In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As p-HEMTs having a self-aligned gate
Author :
Kim, Tae-Woo ; Jo, Seong June ; Shin, Seung Heon ; Jang, Jae-Hyung ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., GIST, Gwangju
Abstract :
Sub-threshold characteristics of a 0.2 mum self-aligned gate (SAG) capless InAlAs/InGaAs p-HEMT having a highly strained InAs sub-channel were investigated. The extracted ION/IOFF ratio and sub-threshold slope of the SAG capless HEMT (1.27times104 and 78 mV/dec) was better than those of the conventional recessed p-HEMT (5.1times103 and 120 mV/dec), respectively. The capless p-HEMT showed an ION/IOFF ratio twice larger than that of the conventional recessed p-HEMT having a heavily doped InGaAs cap layer. Even without the heavily n-doped InGaAs cap layer, the 0.2 mum SAG capless p-HEMT showed the maximum gm, fT, and v sat (saturation velocity) of 1.12 S/mm, 185 GHz, and 3.3times107 cm/sec, respectively
Keywords :
III-V semiconductors; aluminium compounds; electrical conductivity; gallium arsenide; high electron mobility transistors; indium compounds; 1.12 S/mm; 185 GHz; 3.3E7 cm/s; InP-In0.52Al0.48As-In0.53Ga 0.47As; capless InP/In0.52Al0.48As/In0.53Ga0.47 As p-HEMT; conventional recessed p-HEMT; extracted ION/IOFF ratio; heavily doped InGaAs cap layer; highly strained InAs sub-channel; saturation velocity; self-aligned gate; sub-threshold characteristics; sub-threshold slope; Etching; Fabrication; Frequency; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; Logic devices;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634177
