Title :
Low-voltage AlGaSb/InAs/AlGaSb PnP HBTs
Author :
Brar, B. ; Bergman, J. ; Pierson, R. ; Rowell, P. ; Nagy, G. ; Sullivan, G. ; Kadow, C. ; Lin, H.K. ; Gossard, A. ; Rodwell, M.
Author_Institution :
Rockwell Sci. Co., USA
Abstract :
In this paper, we report on a significantly re-designed InAs/AlGaSb PnP transistor with improved low voltage operation, high collector current densities, and dc current gain approaching 50. The present device was grown on lattice matched GaSb substrates with the active layer thickness of the device consisting of only 115nm sandwiched between P-type GaSb emitter and collector contacts.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; heterojunction bipolar transistors; indium compounds; 115 nm; AlGaSb-InAs-AlGaSb; AlGaSb/InAs/AlGaSb PnP HBTs; GaSb; GaSb collector; GaSb emitter; GaSb substrates; PnP transistor; active layer; high collector current densities; low voltage operation; low-voltage HBT; Charge measurement; Conducting materials; Current density; Current measurement; Gain measurement; Heterojunction bipolar transistors; Inspection; Low voltage; Ohmic contacts; Space charge;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226887
