DocumentCode :
1980592
Title :
Ultra fast Gunn effect at THz frequencies in HEMTs
Author :
Mateos, J. ; Perez, Sandra ; Pardo, D. ; González, T.
Author_Institution :
Dpto. Fisica Aplicada, Salamanca Univ.
fYear :
0
fDate :
0-0 0
Firstpage :
313
Lastpage :
316
Abstract :
When the drain-source bias is sufficiently high the emission spectra of HEMTs show peaks at THz frequencies. In this work, we will show the results of Monte Carlo simulations of 80-nm-gate InAlAs/InGaAs HEMTs where ultra-high frequency (in the THz range) Gunn-like oscillations in the gate-drain region of the devices have been observed. Such high frequency implies that the drift velocity of the high field travelling domain approaches 5times105 m/s (a fivefold increase with respect to the steady-state saturation velocity of electrons). This unexpectedly high velocity comes from the presence of extremely fast ballistic electrons in that region, able to go through the high field domain without overcoming intervalley transfer
Keywords :
Gunn devices; Gunn effect; Monte Carlo methods; ballistic transport; high electron mobility transistors; oscillations; 80 nm; InAlAs-InGaAs; InAlAs/InGaAs HEMT; Monte Carlo simulations; ballistic electrons; drain-source bias; drift velocity; emission spectra; gate-drain region; high field domain; high field travelling domain; intervalley transfer; steady-state saturation velocity; ultra-high frequency Gunn-like oscillations; ultrafast Gunn effect; Electrons; Frequency; Gunn devices; HEMTs; Indium compounds; Indium gallium arsenide; Infrared detectors; Ionizing radiation; MODFETs; Radiation detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
Type :
conf
DOI :
10.1109/ICIPRM.2006.1634178
Filename :
1634178
Link To Document :
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