Title :
Reduced features two-dimensional photonic crystals on InP-based materials etched using Cl/sub 2//Ar inductively coupled plasma
Author :
Lee, K.-H. ; Guilet, S. ; Sagnes, I. ; Talneau, A.
Author_Institution :
Lab. de Photonique et de Nanostructures, CNRS, Marcoussis
Abstract :
We have fabricated two-dimensional InP-based photonic crystal structures using Cl2/Ar inductively coupled plasma etching. Etched depth of 2.8 mum is obtained for 240 nm hole diameter with a nearly vertical shape. With this recipe, we are able to etch small features, as small as 110 nm, down to 1.9 mum. Optical qualification shows 80 dB/cm propagation losses in W3 InP/InGaAsP/InP photonic crystal waveguide
Keywords :
III-V semiconductors; indium compounds; optical fabrication; optical losses; optical waveguides; photonic crystals; sputter etching; 2.8 mum; 240 nm; InP; InP-based materials; W3 InP/InGaAsP/InP photonic crystal waveguide; etching; inductively coupled plasma; propagation loss; two-dimensional photonic crystals; Argon; Crystalline materials; Etching; Indium phosphide; Optical waveguides; Photonic crystals; Plasma applications; Plasma materials processing; Qualifications; Shape;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634184
