• DocumentCode
    1980703
  • Title

    Reduced features two-dimensional photonic crystals on InP-based materials etched using Cl/sub 2//Ar inductively coupled plasma

  • Author

    Lee, K.-H. ; Guilet, S. ; Sagnes, I. ; Talneau, A.

  • Author_Institution
    Lab. de Photonique et de Nanostructures, CNRS, Marcoussis
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    336
  • Lastpage
    339
  • Abstract
    We have fabricated two-dimensional InP-based photonic crystal structures using Cl2/Ar inductively coupled plasma etching. Etched depth of 2.8 mum is obtained for 240 nm hole diameter with a nearly vertical shape. With this recipe, we are able to etch small features, as small as 110 nm, down to 1.9 mum. Optical qualification shows 80 dB/cm propagation losses in W3 InP/InGaAsP/InP photonic crystal waveguide
  • Keywords
    III-V semiconductors; indium compounds; optical fabrication; optical losses; optical waveguides; photonic crystals; sputter etching; 2.8 mum; 240 nm; InP; InP-based materials; W3 InP/InGaAsP/InP photonic crystal waveguide; etching; inductively coupled plasma; propagation loss; two-dimensional photonic crystals; Argon; Crystalline materials; Etching; Indium phosphide; Optical waveguides; Photonic crystals; Plasma applications; Plasma materials processing; Qualifications; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634184
  • Filename
    1634184