DocumentCode
1980703
Title
Reduced features two-dimensional photonic crystals on InP-based materials etched using Cl/sub 2//Ar inductively coupled plasma
Author
Lee, K.-H. ; Guilet, S. ; Sagnes, I. ; Talneau, A.
Author_Institution
Lab. de Photonique et de Nanostructures, CNRS, Marcoussis
fYear
0
fDate
0-0 0
Firstpage
336
Lastpage
339
Abstract
We have fabricated two-dimensional InP-based photonic crystal structures using Cl2/Ar inductively coupled plasma etching. Etched depth of 2.8 mum is obtained for 240 nm hole diameter with a nearly vertical shape. With this recipe, we are able to etch small features, as small as 110 nm, down to 1.9 mum. Optical qualification shows 80 dB/cm propagation losses in W3 InP/InGaAsP/InP photonic crystal waveguide
Keywords
III-V semiconductors; indium compounds; optical fabrication; optical losses; optical waveguides; photonic crystals; sputter etching; 2.8 mum; 240 nm; InP; InP-based materials; W3 InP/InGaAsP/InP photonic crystal waveguide; etching; inductively coupled plasma; propagation loss; two-dimensional photonic crystals; Argon; Crystalline materials; Etching; Indium phosphide; Optical waveguides; Photonic crystals; Plasma applications; Plasma materials processing; Qualifications; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634184
Filename
1634184
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