Title :
Effect of temperature on nanocrystalline diamond field emission device characteristics
Author :
Abdel-Motaleb, I.M. ; Auciello, O. ; Carlisle, J. ; Gruen, D. ; Birrell, J.
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
In this study field emission devices were fabricated by deposition nitrogen doped ultra nanocrystalline diamond on Si-tips array. The diamond was grown using plasma enhanced CVD. This study explains why material, such as diamond, with a work function of 5 ev can emit electrons at much lower energy. SEM images are also shown.
Keywords :
electron field emission; nanostructured materials; plasma CVD; scanning electron microscopy; work function; C:N; SEM; Si-tips array; deposition; electrons emission; nanocrystalline diamond field emission; nitrogen doped ultra nanocrystalline diamond; plasma enhanced CVD; work function; Anodes; Argon; Electron emission; Materials science and technology; Nanoscale devices; Nitrogen; Plasma devices; Plasma materials processing; Plasma temperature; Threshold voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226892
