Title :
Polarization characteristics of Sb-introduced Ga(In)As covered InAs quantum dots
Author :
Matsuura, Tetsuya ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution :
Microsystem Res. Center, Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama
Abstract :
Polarization characteristics of MBE grown InAs QD using a Ga(In)AsSb cover layer was investigated using room temperature photoluminescence for in-plane direction. The polarization insensitivity was observed by introducing In into a cover layer, whereas, Sb-introduction caused polarization sensitivity with good optical quality over 1.2 mum
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; photoluminescence; semiconductor quantum dots; InAs-GaInAsSb; MBE; Sb-introduced Ga(In)As covered InAs quantum dots; in-plane direction; optical quality; photoluminescence; polarization; Capacitive sensors; Gallium arsenide; Optical polarization; Photoluminescence; Quantum dot lasers; Quantum dots; Substrates; Temperature; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634186
