DocumentCode :
1980769
Title :
Photoelectric properties and their dopant concentration dependence in SrTiO3 /Nb: SrTiO3 heterojunctions
Author :
Ni, Mucui ; Lu, Jun ; Li, Shouchun ; Zhang, Jing ; Chen, Yafu
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
The photoelectric properties and their dependences on Nb dopant concentration of SrTiO3/Nb: SrTiO3 heterojunctions were investigated. The charge transferring and impurity levels at the interface of the heterostructures could account for the results.
Keywords :
charge exchange; doping profiles; impurity distribution; niobium; photoelectricity; strontium compounds; SrTiO3-SrTiO3:Nb; charge transfer; dopant concentration; impurity levels; photoelectric property; Electrons; Heterojunctions; Impurities; Lighting; Magnetic properties; Niobium; Optical pulses; Pulsed laser deposition; Substrates; Temperature; Pulsed laser deposition; heterojunction; photoelectric properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292604
Filename :
5292604
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1980769
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