DocumentCode
1980776
Title
A New Model for Breakdown Limitations in Power MESFET´s : Contribution to Device Optimization
Author
Wroblewski, R. ; Salmer, G.
Author_Institution
"CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS - LILLE
fYear
1981
fDate
7-11 Sept. 1981
Firstpage
275
Lastpage
279
Abstract
The channel avalanche breakdown in GaAs MESFET´s has been investigated. It is due to the stationary high field domain which builds-up between the gate and drain. Various types of domain have been found depending on technological parameters and the gate bias. Design rules for high breakdown voltages are given.
Keywords
Avalanche breakdown; Breakdown voltage; Electric breakdown; Electrons; Gallium arsenide; MESFETs; Microwave devices; Power generation; Shape; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1981. 11th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1981.333025
Filename
4131625
Link To Document