Title :
A New Model for Breakdown Limitations in Power MESFET´s : Contribution to Device Optimization
Author :
Wroblewski, R. ; Salmer, G.
Author_Institution :
"CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS - LILLE
Abstract :
The channel avalanche breakdown in GaAs MESFET´s has been investigated. It is due to the stationary high field domain which builds-up between the gate and drain. Various types of domain have been found depending on technological parameters and the gate bias. Design rules for high breakdown voltages are given.
Keywords :
Avalanche breakdown; Breakdown voltage; Electric breakdown; Electrons; Gallium arsenide; MESFETs; Microwave devices; Power generation; Shape; Voltage control;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.333025
