• DocumentCode
    1980785
  • Title

    Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing

  • Author

    Wu, Min-Lun ; Kuo, Shou-Yi ; Lai, Fang-I

  • Author_Institution
    Dept. of Electr. Eng., Yuan Ze Univ., Jungli, Taiwan
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED´s output-power is well controlled in the range of 0.5%~1.5%.
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; AlGaInP-GaAs; LED; hydrogen annealing; light emitting diode; output-power stability; thermal annealing; Charge carrier processes; Diode lasers; Gallium arsenide; Hydrogen; Light emitting diodes; Nitrogen; Quantum well devices; Rapid thermal annealing; Stability; Temperature; AlGaInP; annealing; hydrogen;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292605
  • Filename
    5292605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1980785