Title :
Improvement on output-power stability of AlGaInP/GaAs light emitting diodes by hydrogen annealing
Author :
Wu, Min-Lun ; Kuo, Shou-Yi ; Lai, Fang-I
Author_Institution :
Dept. of Electr. Eng., Yuan Ze Univ., Jungli, Taiwan
Abstract :
In this article, we report the improvement on the output-power stability of AlGaInP/GaAs LEDs by hydrogen annealing. Compared with those samples annealed in AsH3 ambient, the variation of hydrogen-annealed LED´s output-power is well controlled in the range of 0.5%~1.5%.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; AlGaInP-GaAs; LED; hydrogen annealing; light emitting diode; output-power stability; thermal annealing; Charge carrier processes; Diode lasers; Gallium arsenide; Hydrogen; Light emitting diodes; Nitrogen; Quantum well devices; Rapid thermal annealing; Stability; Temperature; AlGaInP; annealing; hydrogen;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292605
