Title :
A Wide - Band, High Power. Linear Transistor at 4 GHz
Author :
Gimine, G. ; Manhout, JP. ; Bonis, M. ; Paris, P.
Author_Institution :
R.T.C. LA RADIOTECHNIQUE COMPELEC, B.P. 6025, 14001 CAEN - CEDEX, FRANCE
Abstract :
This paper describes the state of the art reached with silicon linear bipolar transistors in the 4 GHz frequency range. Designed with a five gigahertz process, the device, internally input and output matched is able to deliver 2.5 W of wide band linear power in the 3.7 to 4.2 GHz range at 1 dB of gain compression.
Keywords :
Circuits; Etching; Frequency; Impedance matching; Oxidation; Power amplifiers; Resists; Silicon; Titanium; Wideband;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.333027
