Investigation of fast monolithic saturable absorber microcavities on GaAs substrate

Author

Le Du, M. ; Harmard, J.-C. ; Oudar, J.-L.

Author_Institution

CNRS, Marcoussis

fYear

0

fDate

0-0 0

Firstpage

356

Lastpage

359

Abstract

We propose and realize GaAs-based monolithic fast saturable absorber devices. The saturable absorber material developed is a group of GaInNAsSb quantum-wells that allow absorption at telecommunication wavelength. The quantum-wells are embedded in a Fabry-Perot microcavity. Two types of microcavity mirrors are studied : a high 1.83 index contrast GaAs/AlOx Bragg reflector and a 0.48 index contrast GaAs/AlAs Bragg reflector. We compare thermal resistivity measurements made on both microcavity types and describe their nonlinear and dynamic performances, for a potential application as all-optical reshaping regenerators in high bit-rate transmission lines

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microcavities; mirrors; optical materials; optical repeaters; optical saturable absorption; semiconductor quantum wells; thermal conductivity; Fabry-Perot microcavity; GaAs; GaAs substrate; GaAs-AlAs; GaAs-AlO; GaAs/AlAs Bragg reflector; GaInNAsSb; GaInNAsSb quantum-well; all-optical reshaping regenerator; monolithic saturable absorber microcavity; thermal resistivity; Absorption; Gallium arsenide; Microcavities; Mirrors; Nonlinear optics; Optical noise; Optical saturation; Radiative recombination; Repeaters; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on

Conference_Location

Princeton, NJ

Print_ISBN

0-7803-9558-1

Type

conf

DOI

10.1109/ICIPRM.2006.1634189

Filename

1634189