Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

Author

Hsieh, Yao Lung ; Kuo, S.Y. ; Lai, Fang-I

Author_Institution

Dept. of Electr. Eng., Yuan Ze Univ., Jungli, Taiwan

fYear

2009

fDate

30-3 Aug. 2009

Firstpage

1

Lastpage

2

Abstract

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850degC growth temperature increased >50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.

Keywords

III-V semiconductors; MOCVD; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; LED; MOCVD; extraction efficiency; light emitting diodes; metal-organic chemical vapor deposition; naturally textured surface; surface layer; temperature 850 degC; Chemical vapor deposition; Epitaxial layers; Gallium nitride; Light emitting diodes; MOCVD; Quantum well devices; Rough surfaces; Surface morphology; Surface roughness; Surface texture; Gallium nitride (GaN); extraction efficiency; light-emitting diode (LED); textured surface;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3829-7

Electronic_ISBN

978-1-4244-3830-3

Type

conf

DOI

10.1109/CLEOPR.2009.5292606

Filename

5292606