Title :
Epitaxial ferromagnet-semiconductor heterostructures for electrical spin injection
Author_Institution :
Paul Drude Inst. for Solid State Electron., Germany
Abstract :
In this paper, we review our recent achievements on growth, characterisation and spin transport in two different classes of FM/SC heterostructures, first Fe-on-GaAs and MnAs-on-GaAs, which represent metallic FM/SC systems, second (Ga,Mn)As-on-GaAs and (Ga,Mn)N-on-GaN, which represent semiconducting FM/SC systems.
Keywords :
III-V semiconductors; ferromagnetic materials; gallium arsenide; gallium compounds; iron; magnetic epitaxial layers; manganese compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; spin polarised transport; wide band gap semiconductors; (Ga,Mn)As-GaAs heterostructures; (Ga,Mn)N-GaN heterostructures; Fe-GaAs; Fe-GaAs heterostructures; GaAsMnAs-GaAs; GaNMnN-GaAs; MnAs-GaAs; MnAs-GaAs heterostructures; electrical spin injection; epitaxial ferromagnet-semiconductor heterostructures; Gallium arsenide; Iron; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic moments; Perpendicular magnetic anisotropy; Semiconductor materials; Spin polarized transport; Temperature;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226898
