Title :
A 30 GHz FET-Oscillator using Fin-Line Circuitry
Author_Institution :
Dipl.-Ing., c/o AEG-TELEFUNKEN, Anlagentechnik, Geschÿftsbereich Hochfrequenztechnik, Grundlagenentwicklung, A1 E32, SedanstraÃ\x9fe 10, Postfach 1730, D-7900 Ulm/Donau, West Germany
Abstract :
The rapid progress in the semiconductor field has rendered possible the utilization of GaAs Field Effect Transistors for oscillator applications in the mm-wave range. Recently quasi planar line structures, like fin-line, have been investigated. Based on this know-how, a 30 GHz fin-line FET-Oscillator has been developed. 3 mW of output power were achieved with a corresponding DC-RF efficiency of nearly 4 %.
Keywords :
Assembly; Bonding; Circuits; FETs; Finline; Frequency; Gallium arsenide; Oscillators; Power generation; Semiconductor device packaging;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.333028
