Title :
Broad and flat emission spectrum from InGaAs/InGaAlAs asymmetric multiple quantum wells: effect of well-width and modulation-doping profiles
Author :
Chen, C.Y. ; Liang, C.F. ; Feng, David J. ; Lin, E.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
Asymmetric InGaAs/InGaAlAs multi-quantum wells exhibit a = 1.55 mum broad and flat emission spectrum with 3-dB bandwidth up to 2500 Aring. Emission spectra and laser diodes by the effects of well-width and modulation-doping profiles are presented
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; indium compounds; luminescence; quantum well lasers; semiconductor doping; semiconductor quantum wells; 3 dB; InGaAs-InGaAlAs; InGaAs/InGaAlAs asymmetric multiple quantum wells; bandwidth; emission spectrum; laser diodes; modulation-doping profile; well-width; Bandwidth; Diode lasers; Doping; Electrons; Epitaxial layers; Indium gallium arsenide; Optical fiber communication; Optical modulation; Optical waveguides; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634192
