Modeling of carbon nanotube based device and interconnect using Verilog-AMS

As the scaling of Si MOSFET approaches its limit, new alternatives are being explored to overcome these limitations. Carbon nanotube field-effect transistor (CNTFET) and carbon nanotube (CNT) interconnects are the most promising candidates for post-silicon era of integrated circuits. This paper deals with the circuit- compatible modeling of ambipolar CNTFET which demonstrates p-type or n-type switching behavior depending upon the polarity-gate voltage, and the compact modeling of CNT interconnect. The model is implemented in Verilog-AMS and the designs are simulated in SPICE. The performance of CNTFET and CNT interconnect have been investigated in high performance digital circuitry based on the models.