DocumentCode
1980945
Title
Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM
Author
Chen, Lingling ; Zhang, Meng ; Cai, Yue ; Zhou, Chun ; Ren, Ling ; Zhang, Zhigang
Author_Institution
Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing, China
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed. Simulation demonstrates a uniform modulation depth up to 25% for the wavelength from 1000 to 1080 nm.
Keywords
III-V semiconductors; indium compounds; laser accessories; multilayers; optical modulation; optical phase shifters; optical saturable absorption; InGaAs-InAlAs; high modulation depth multilayer; phase shift compensation; semiconductor saturable absorber; wavelength 1000 nm to 1080 nm; Absorption; Fiber lasers; Indium compounds; Indium gallium arsenide; Laser mode locking; Laser theory; Phase modulation; Reflectivity; Semiconductor lasers; Solid lasers; High Modulation Depth; Phase Shift; SESAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292612
Filename
5292612
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