Title :
Metamorphic 6.0 /spl Aring/ narrow band gap HBT technology on InP substrates
Author :
Cavus, A. ; Sandhu, R. ; Monier, C. ; Pascua, D. ; Cox, C. ; Poust, B. ; Hsing, R. ; Noori, A. ; Hayashi, S. ; Goorsky, M. ; Gutierrez-Aitken, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
Abstract :
In0.86Al0.14As/In0.86Ga0.14 As double heterojunction bipolar transistors (DHBTs) were grown on InP substrates by using sub-micron 6.0 Aring metamorphic graded buffer layers. Good DC and RF characteristics have been demonstrated with a current gain of 30, low base-collector reverse leakage (<muA), low turn-on voltage (0.45 eV), practical breakdown voltage (~2.5 V), and peak frequencies fT and fMAX exceeding 150 GHz. Functional circuits with complexity ranging from 20 to 1100 devices have been successfully demonstrated with power dissipation reduced by a factor of two compared to equivalent circuits designed with conventional InP technology
Keywords :
III-V semiconductors; aluminium compounds; buffer layers; energy gap; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; 0.45 eV; 6.0 angstrom; DC characteristics; In0.86Al0.14As-In0.86Ga0.14 As; In0.86Al0.14As/In0.86Ga0.14 As DHBT; In0.86Al0.14As/In0.86Ga0.14 As double heterojunction bipolar transistor; InP; InP substrates; RF characteristics; base-collector reverse leakage; complexity; current gain; functional circuits; metamorphic graded buffer layers; metamorphic narrow band gap HBT technology; peak frequency; power dissipation; practical breakdown voltage; turn-on voltage; Breakdown voltage; Buffer layers; Circuits; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium phosphide; Low voltage; Narrowband; Power dissipation; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634196
