Title :
SiGe quantum dots memory devices with HfO/sub 2/ tunneling oxide
Author :
Kim, D.-W. ; Kim, T. ; Yueran Liu ; Weltzer, L. ; Banerjee, S.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper, we have developed SiGe dot flash memory with high-k dielectric HfO/sub 2/. These high-k floating gate dot devices show lower programming/ erase voltage as well as increased charge retention time. SiGe dots were characterised by atomic force microscopy and transmission electron microscopy.
Keywords :
Ge-Si alloys; atomic force microscopy; dielectric devices; dielectric materials; flash memories; hafnium compounds; semiconductor devices; semiconductor materials; semiconductor quantum dots; transmission electron microscopy; tunnelling; AFM; HfO/sub 2/ tunneling oxide; SiGe quantum dots memory device; SiGe-HfO/sub 2/; TEM; atomic force microscopy; charge retention time; flash memory; high-k floating gate dot devices; lower programming; transmission electron microscopy; Atomic force microscopy; Flash memory; Germanium silicon alloys; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Quantum dots; Silicon germanium; Transmission electron microscopy;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226903
