DocumentCode
1981002
Title
A comparative study on the high band gap materials(GaN and SiC)- based IMPATTs
Author
Panda, Anup Kumar ; Parida, R.K. ; Agrawala, NC ; Dash, G.N.
Author_Institution
Dept. of ECE, Nat. Inst. of Sci. & Technol., Qrissa
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
1
Lastpage
4
Abstract
The dynamic characteristics of GaN and SiC-based IMPATTs are reported at D-band and the device properties are compared at the same operating conditions and frequency of operations. A noise analysis model was also employed for performing the studies. The noise of GaN-based IMPATTs is found to be higher than that of Sz´C-based IMPATTs. It is shown that high bandgap semiconductor material based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.
Keywords
IMPATT diodes; energy gap; gallium compounds; silicon compounds; wide band gap semiconductors; IMPATTs; high band gap materials; high bandgap semiconductor material; noise analysis model; Computational modeling; Frequency; Gallium nitride; Impact ionization; Photonic band gap; Semiconductor device noise; Semiconductor diodes; Semiconductor materials; Silicon carbide; Tunneling; Gallium Nitride; IMPATT diodes; Impact Ionization; SiC; high-frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location
Bangkok
Print_ISBN
978-1-4244-0748-4
Electronic_ISBN
978-1-4244-0749-1
Type
conf
DOI
10.1109/APMC.2007.4555043
Filename
4555043
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