A comparative study on the high band gap materials(GaN and SiC)- based IMPATTs

The dynamic characteristics of GaN and SiC-based IMPATTs are reported at D-band and the device properties are compared at the same operating conditions and frequency of operations. A noise analysis model was also employed for performing the studies. The noise of GaN-based IMPATTs is found to be higher than that of Sz´C-based IMPATTs. It is shown that high bandgap semiconductor material based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.