Title :
The epitaxial growth of high electron mobility InGaAs by metalorganic chemical vapor deposition with triethylindium for InP-based HEMTS
Author :
Uchida, Masahiro ; Araki, Gako
Author_Institution :
NTT Adv. Technol. Corp., Kanagawa
Abstract :
To improve the quality of epitaxial wafer for InP-based HEMTs, we introduced a new MOCVD machine and new material combination including triethylindium on growing InGaAs channel layer. Thin InGaAs film and the brief HEMTs structure were grown by new material combination. And their electron mobility was compared with the samples grown with general material combination. The result showed new material combination enhanced electron mobility. Furthermore, on fabricated HEMTs devices, the enhancement of static characteristics was found when new material combination was used
Keywords :
III-V semiconductors; MOCVD; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InGaAs; InP; InP-based HEMTS; MOCVD; channel layer; electron mobility; epitaxial growth; epitaxial wafer; high electron mobility InGaAs; metalorganic chemical vapor deposition; thin InGaAs film; triethylindium; Ash; Carbon capture and storage; Chemical vapor deposition; Crystalline materials; Electron mobility; Epitaxial growth; HEMTs; Indium gallium arsenide; MOCVD; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634199
