DocumentCode :
1981076
Title :
The indium phosphide bare substrate: its influence on the epitaxy layer quality
Author :
Jacob, G. ; Mosel, F. ; Robert, P.O. ; Giraud, E.
Author_Institution :
InPACT, Moutiers
fYear :
0
fDate :
0-0 0
Firstpage :
399
Lastpage :
404
Abstract :
This paper reviews the correlation between the substrate specifications and the quality of the epi-layer (morphology, photoluminescence, electrical properties). We will determine the list of critical specifications (on opposite to other ones) in order to get good epi growth
Keywords :
III-V semiconductors; electrical conductivity; epitaxial growth; indium compounds; photoluminescence; semiconductor epitaxial layers; substrates; surface morphology; InP; critical specifications; electrical properties; epi growth; epitaxial layer quality; indium phosphide bare substrate; morphology; photoluminescence; substrate specifications; Bars; Digital signal processing; Epitaxial growth; Epitaxial layers; Indium phosphide; Lithography; Morphology; Photoluminescence; Stress; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
Type :
conf
DOI :
10.1109/ICIPRM.2006.1634200
Filename :
1634200
Link To Document :
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