Title :
550 GHz-f/sub T/ pseudomorphic InP-HEMTs with reduced source-drain resistance
Author :
Shinohara, K. ; Yamashita, Y. ; Endoh, A. ; Watanabe, I. ; Hikosaka, K. ; Mimura, T. ; Hiyamizu, S. ; Matsui, T.
Author_Institution :
Commun. Res. Lab., Tokyo, Japan
Abstract :
In this paper, we adopted a pseudomorphic InGaAs channel to further boost the electron velocity and applied a new multi-layer cap structure to reduce source and drain parasitic resistances to realize even higher RF performance.
Keywords :
III-V semiconductors; electric resistance; gallium arsenide; high electron mobility transistors; indium compounds; 550 GHz; HEMT; InGaAs channel; InP-InGaAs; electron velocity; multilayer cap structure; parasitic resistances; source-drain resistance; Current density; Current-voltage characteristics; Delay effects; Etching; Frequency; HEMTs; Voltage;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226908
