• DocumentCode
    1981079
  • Title

    550 GHz-f/sub T/ pseudomorphic InP-HEMTs with reduced source-drain resistance

  • Author

    Shinohara, K. ; Yamashita, Y. ; Endoh, A. ; Watanabe, I. ; Hikosaka, K. ; Mimura, T. ; Hiyamizu, S. ; Matsui, T.

  • Author_Institution
    Commun. Res. Lab., Tokyo, Japan
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    145
  • Lastpage
    146
  • Abstract
    In this paper, we adopted a pseudomorphic InGaAs channel to further boost the electron velocity and applied a new multi-layer cap structure to reduce source and drain parasitic resistances to realize even higher RF performance.
  • Keywords
    III-V semiconductors; electric resistance; gallium arsenide; high electron mobility transistors; indium compounds; 550 GHz; HEMT; InGaAs channel; InP-InGaAs; electron velocity; multilayer cap structure; parasitic resistances; source-drain resistance; Current density; Current-voltage characteristics; Delay effects; Etching; Frequency; HEMTs; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226908
  • Filename
    1226908
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981079