Title :
RF noise performance of low power InAs/AlSb HFETs
Author :
Bergman, J. ; Nagy, G. ; Sullivan, G. ; Brar, B. ; Kadow, C. ; Lin, H.-K. ; Gossard, A. ; Rodwell, M.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA, USA
Abstract :
In this paper, we report on the complete RF noise characteristics of a 0.25 /spl mu/m gate-length InAs/AlSb HFET exhibiting a minimum noise figure F/sub min/ less than 1 dB from 2-25 GHz. Energy band diagram and the DC characteristics of the HFET were analysed.
Keywords :
III-V semiconductors; aluminium compounds; band structure; indium compounds; noise measurement; power field effect transistors; radiofrequency interference; semiconductor device noise; 0.25 micron; 2 to 25 GHz; DC characteristics; InAs-AlSb; RF noise; energy band; noise parameter; power HFET; Electron mobility; Gallium arsenide; Gate leakage; HEMTs; Leakage current; Low-frequency noise; MODFETs; Noise figure; Noise measurement; Radio frequency;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226909
