FDTD Analysis of Small Signal Model for GaAs MESFETs Based on Three Line Structure

Author

Afrooz, Kambiz ; Abdipour, Abdolali ; Tavakoli, Ahad ; Movahhedi, Masoud

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

We have studied the effect of wave propagation along the electrodes of a GaAs MESFET using fully distributed model. A three coupled lines theory, including active and passive electromagnetic coupling between semiconductor electrodes is used to analysis. Each distributed device element is considered as a combination of three coupled lines and a conventional equivalent circuit of a GaAs MESFET. The equations derived from the fully distributed equivalent circuit are solved using Finite-Difference Time Domain (FDTD) technique. The procedure is applied to a pi GaAs MESFET and the scattering parameters are computed from time domain results over a frequency range of 1-40 GHz.

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; finite difference time-domain analysis; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; MESFET; electromagnetic coupling; equivalent circuits; finite difference time-domain analysis; small signal model; wave propagation; Coupling circuits; Electrodes; Electromagnetic coupling; Electromagnetic propagation; Equivalent circuits; Finite difference methods; Gallium arsenide; MESFETs; Signal analysis; Time domain analysis; Coupled active lines; Fully distributed modeling; finite-diffrence time-domain (FDTD); microwave transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555050

Filename

4555050