DocumentCode
1981165
Title
Metalorganic Chemical Vapor Deposition Growth of High-Quality InAs/GaSb Type II Superlattices for Mid-IR Photodetector Applications
Author
Zhang, X.B. ; Petschke, A. ; Mou, S. ; Xu, C. ; Ryou, J.H. ; Chuang, S.L. ; Hsieh, K.C. ; Dupuis, R.D.
fYear
2006
fDate
7-11 May 2006
Firstpage
415
Lastpage
419
Keywords
Chemical vapor deposition; Gallium arsenide; Infrared detectors; Laser sintering; MOCVD; Metallic superlattices; Molecular beam epitaxial growth; Photodetectors; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634204
Filename
1634204
Link To Document