Title :
AlSb/InAs/InAsP/AlSb composite-channel HFETs
Author :
Lin, H.-K. ; Kadow, C. ; Dahlstrom, M. ; Bae, J.-U. ; Rodwell, M. ; Gossard, A.C. ; Brar, B. ; Sullivan, G. ; Nagy, G. ; Bergman, J.
Author_Institution :
Dept. of Mater., Univ. of California, Santa Barbara, CA, USA
Abstract :
In this paper, we report the first demonstration of HFETs with InAs/InAsP composite channels alleviating breakdown phenomena and improving the device performance in comparison to single-channel AlSb/InAs/AlSb HFETs.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; indium compounds; semiconductor device breakdown; AlSb-InAs-InAsP-AlSb; AlSb/InAs/InAsP/AlSb composite-channel HFET; composite channels alleviating breakdown; single-channel AlSb/InAs/AlSb HFET; Circuits; Cutoff frequency; Degradation; Electric breakdown; Electron devices; HEMTs; Impact ionization; Leakage current; MODFETs; Transconductance;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226911
