Title :
MBE Growth of Thick InGaAsN Layers with Absorption Edge at 1.95?m on InP Substrates
Author :
Miura, K. ; Nagai, Y. ; Iguchi, Y. ; Okada, H. ; Kawamura, Y.
Author_Institution :
Transmission Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Osaka
Abstract :
Thick InGaAsN layers were successfully grown on InP substrates by molecular beam epitaxy (MBE) method. The secondary ion mass spectroscopy (SIMS) analysis showed the nitrogen concentration in an InGaAsN layer was uniform. X-ray diffraction (XRD) measurements showed the crystalline quality of InGaAsN layer can be improved by post-growth annealing at a proper temperature. XRD and photoluminescence (PL) measurements showed that using As2 instead of As4 as arsenic source during growth also improved the crystalline quality of InGaAsN layer
Keywords :
III-V semiconductors; X-ray diffraction; annealing; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; substrates; wide band gap semiconductors; 1.95 mum; InGaAsN; InGaAsN layers; InP; InP substrates; MBE; X-ray diffraction; absorption edge; molecular beam epitaxy; photoluminescence; post-growth annealing; secondary ion mass spectroscopy; Annealing; Crystallization; Electromagnetic wave absorption; Indium phosphide; Mass spectroscopy; Molecular beam epitaxial growth; Nitrogen; Substrates; X-ray diffraction; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634205
