DocumentCode
1981180
Title
High density packaging of flash memory
Author
Gann, Keith D.
Author_Institution
Irvine Sensors Corp., Costa Mesa, CA, USA
fYear
1998
fDate
22-24 Jun 1998
Firstpage
96
Lastpage
98
Abstract
The next innovation in three-dimensional (3D) packaging is heterogeneous stacks containing all of the components for a complete system or subsystem. The stack is constructed using known good die (KGD), and provides a high level of integration and interconnectivity. This packaging technology lends itself to flash memory and DRAM mass storage, as well as complete computers and other complex systems
Keywords
DRAM chips; flash memories; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; 3D packaging; DRAM mass storage; flash memory; heterogeneous stacks; high density packaging; known good die; package integration level; package interconnectivity; packaging technology; subsystem components; Buildings; Ceramics; Flash memory; Logic; Packaging; Random access memory; Sensor systems; Silicon; Technological innovation; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4518-5
Type
conf
DOI
10.1109/NVMT.1998.723228
Filename
723228
Link To Document