Title :
InGaAsP/InP MQW DBR Laser Diode Fabricated by Selective Area MOVPE and Mass Transport for Monolithic Integration
Author :
Darja, Jesse ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Electron. Eng., Tokyo Univ.
Abstract :
Wide-stripe MOVPE selective area growth and InAsP mass transport on V-grooves can be used to fabricate distributed Bragg reflector type laser in a single growth step. This method can be applied for monolithic integration of single mode laser diodes with passive/active components
Keywords :
MOCVD; distributed Bragg reflector lasers; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DBR laser; InAsP; InAsP mass transport; MOVPE; distributed Bragg reflector laser; monolithic integration; single mode laser diodes; wide-stripe selective area growth; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gratings; Indium phosphide; Monolithic integrated circuits; Photonic band gap; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634206
