Title :
Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with record wide wavelength span
Author :
Arai, M. ; Kondo, T. ; Matsutani, A. ; Miyamoto, T. ; Koyama, F.
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In this paper, we propose a growth pressure control during MOCVD growth of VCSEL wafers on a patterned substrate to avoid the mismatch between a grain peak and resonant mode. We demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 0.9-1.2 /spl mu/m, exhibiting a record wavelength span of 192 nm.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 0.9 to 1.2 micron; 192 nm; GaInAs-GaAs; GaInAs/GaAs VCSEL array; MOCVD growth; VCSEL wafers; multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array; wide wavelength span; Chemical vapor deposition; Gallium arsenide; MOCVD; Optical arrays; Pressure control; Resonance; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
DOI :
10.1109/DRC.2003.1226912
