• DocumentCode
    1981242
  • Title

    Self-Gating in Nanoelectronic Junctions

  • Author

    Worschech, L. ; Hartmann, D. ; Reitzenstein, S. ; Forchel, A.

  • Author_Institution
    Tech. Physik, Wurzburg Univ.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    431
  • Lastpage
    435
  • Abstract
    Self-gating induced switching in low dimensional branched channels is reported. The self-gating can be utilized for the realization of compact switches, adders and logic gates based on monolithic junctions
  • Keywords
    adders; nanotechnology; optical logic; optical switches; adders; logic gates; nanoelectronic junctions; self-gating; switches; Adders; Capacitance; Electron beams; Electronic circuits; Logic devices; Logic gates; Nanoscale devices; Switches; Voltage; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    0-7803-9558-1
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2006.1634209
  • Filename
    1634209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981242