Title :
Self-Gating in Nanoelectronic Junctions
Author :
Worschech, L. ; Hartmann, D. ; Reitzenstein, S. ; Forchel, A.
Author_Institution :
Tech. Physik, Wurzburg Univ.
Abstract :
Self-gating induced switching in low dimensional branched channels is reported. The self-gating can be utilized for the realization of compact switches, adders and logic gates based on monolithic junctions
Keywords :
adders; nanotechnology; optical logic; optical switches; adders; logic gates; nanoelectronic junctions; self-gating; switches; Adders; Capacitance; Electron beams; Electronic circuits; Logic devices; Logic gates; Nanoscale devices; Switches; Voltage; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634209
