DocumentCode
1981249
Title
Four-band quantum well infrared photodetector array
Author
Bandara, S.V. ; Gunapala, S.D. ; Liu, J.K. ; Rafol, S.B.
Author_Institution
California Inst. of Technol., Jet propulsion Lab., Pasadena, CA, USA
fYear
2003
fDate
23-25 June 2003
Firstpage
159
Lastpage
160
Abstract
In this paper, four-band quantum well infrared photodetector array has been demonstrated by stacking different multi quantum well structures based on GaAs/AlGaAs/InGaAs material system.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor devices; semiconductor quantum wells; GaAs-AlGaAs-InGaAs; GaAs/AlGaAs/InGaAs material system; four-band quantum well infrared photodetector array; stacking different multi quantum well structures; Detectors; Doping; Gallium arsenide; Gratings; Optical coupling; Optical imaging; Photodetectors; Pixel; Quantum well devices; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2003
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-7727-3
Type
conf
DOI
10.1109/DRC.2003.1226915
Filename
1226915
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