• DocumentCode
    1981249
  • Title

    Four-band quantum well infrared photodetector array

  • Author

    Bandara, S.V. ; Gunapala, S.D. ; Liu, J.K. ; Rafol, S.B.

  • Author_Institution
    California Inst. of Technol., Jet propulsion Lab., Pasadena, CA, USA
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    In this paper, four-band quantum well infrared photodetector array has been demonstrated by stacking different multi quantum well structures based on GaAs/AlGaAs/InGaAs material system.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor devices; semiconductor quantum wells; GaAs-AlGaAs-InGaAs; GaAs/AlGaAs/InGaAs material system; four-band quantum well infrared photodetector array; stacking different multi quantum well structures; Detectors; Doping; Gallium arsenide; Gratings; Optical coupling; Optical imaging; Photodetectors; Pixel; Quantum well devices; Sensor arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226915
  • Filename
    1226915