DocumentCode :
1981249
Title :
Four-band quantum well infrared photodetector array
Author :
Bandara, S.V. ; Gunapala, S.D. ; Liu, J.K. ; Rafol, S.B.
Author_Institution :
California Inst. of Technol., Jet propulsion Lab., Pasadena, CA, USA
fYear :
2003
fDate :
23-25 June 2003
Firstpage :
159
Lastpage :
160
Abstract :
In this paper, four-band quantum well infrared photodetector array has been demonstrated by stacking different multi quantum well structures based on GaAs/AlGaAs/InGaAs material system.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor devices; semiconductor quantum wells; GaAs-AlGaAs-InGaAs; GaAs/AlGaAs/InGaAs material system; four-band quantum well infrared photodetector array; stacking different multi quantum well structures; Detectors; Doping; Gallium arsenide; Gratings; Optical coupling; Optical imaging; Photodetectors; Pixel; Quantum well devices; Sensor arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
Type :
conf
DOI :
10.1109/DRC.2003.1226915
Filename :
1226915
Link To Document :
بازگشت