Title :
Electrical characterization of Al, Ag and In contacts on CuInS2 thin films deposited by spray pyrolysis
Author :
Peza-Tapia, Juan Manuel ; Morales-Acevedo, Arturo ; Ortega-López, Mauricio
Author_Institution :
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City
Abstract :
The specific contact resistivity (rhoC) for Aluminum (Al), Silver (Ag) and Indium (In) metallic contacts on CuInS2 thin films have been determined, from I - V measurements, with the purpose of having the most appropriate ohmic contact for TCO/CdS/CuInS2 solar cells. rhoC was measured using the transmission line (TLM) method for the metallic contacts evaporated on CuInS2 thin films deposited by spray pyrolysis with ratios x = [Cu] / [In] = 1.0, 1.1, 1.3 and 1.5 in the spray solution. The results show that In contacts have the lowest rhoC values for CuInS2 samples grown with x = 1.5. The minimum rhoC was 0.26 ohm-cm2 for the In contacts. This value, although not very low, will allow the fabrication of CuInS2 solar cells with a small series resistance.
Keywords :
aluminium; contact resistance; copper compounds; indium; indium compounds; ohmic contacts; pyrolysis; semiconductor growth; semiconductor thin films; semiconductor-metal boundaries; silver; spray coating techniques; spray coatings; ternary semiconductors; Ag-CuInS2; Al-CuInS2; In-CuInS2; contact resistivity; metallic contacts; ohmic contact; solar cells; spray pyrolysis; thin films; transmission line method; Aluminum; Conductivity; Fabrication; Indium; Ohmic contacts; Photovoltaic cells; Silver; Spraying; Sputtering; Transmission line measurements; CuInS2 thin films; Ohmic contact; spray pyrolysis;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4244-2498-6
Electronic_ISBN :
978-1-4244-2499-3
DOI :
10.1109/ICEEE.2008.4723400