DocumentCode :
1981338
Title :
Selective growth and electrical properties of single-walled carbon nanotubes
Author :
Zhang, R.Y. ; Amlani, I. ; Tsui, R. ; Tresek, J. ; Baker, J.
Author_Institution :
Phys. Sci. Res. Labs., Motorola Labs, Tempe, AZ, USA
fYear :
2003
fDate :
23-25 June 2003
Firstpage :
173
Lastpage :
174
Abstract :
In this paper, we have studied selective area chemical vapor deposition (CVD) of single-walled carbon nanotubes (SWNTs) on substrates patterened with catalyst films consisting of an ultra-thin transition metal layer supported by an Al under-layer.
Keywords :
carbon nanotubes; chemical vapour deposition; contact resistance; semiconductor growth; semiconductor materials; semiconductor thin films; Al layer; C; CVD; Si; Si substrate; catalyst film; chemical vapor deposition; electrical properties; single walled carbon nanotubes; transition metal layer; Carbon nanotubes; Circuits; Contact resistance; Electrodes; Gold; Laboratories; Rivers; Semiconductivity; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2003
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-7727-3
Type :
conf
DOI :
10.1109/DRC.2003.1226920
Filename :
1226920
Link To Document :
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