• DocumentCode
    1981338
  • Title

    Selective growth and electrical properties of single-walled carbon nanotubes

  • Author

    Zhang, R.Y. ; Amlani, I. ; Tsui, R. ; Tresek, J. ; Baker, J.

  • Author_Institution
    Phys. Sci. Res. Labs., Motorola Labs, Tempe, AZ, USA
  • fYear
    2003
  • fDate
    23-25 June 2003
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    In this paper, we have studied selective area chemical vapor deposition (CVD) of single-walled carbon nanotubes (SWNTs) on substrates patterened with catalyst films consisting of an ultra-thin transition metal layer supported by an Al under-layer.
  • Keywords
    carbon nanotubes; chemical vapour deposition; contact resistance; semiconductor growth; semiconductor materials; semiconductor thin films; Al layer; C; CVD; Si; Si substrate; catalyst film; chemical vapor deposition; electrical properties; single walled carbon nanotubes; transition metal layer; Carbon nanotubes; Circuits; Contact resistance; Electrodes; Gold; Laboratories; Rivers; Semiconductivity; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2003
  • Conference_Location
    Salt Lake City, UT, USA
  • Print_ISBN
    0-7803-7727-3
  • Type

    conf

  • DOI
    10.1109/DRC.2003.1226920
  • Filename
    1226920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1981338