DocumentCode
1981340
Title
“S-shaped” negative differential conductivity of high gain GaAs photoconductive switches
Author
Liu, Hong ; Ruan, Chengli
Author_Institution
Coll. of Phys. Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
The formation of the ldquoS-shapedrdquo negative differential conductivity (NDC) of high gain GaAs photoconductive semiconductor switches (PCSS) is qualitatively analyzed. The development of NDC is characterized by localized direct transform from N-shaped to S-shaped NDC.
Keywords
III-V semiconductors; gallium arsenide; photoconducting switches; GaAs; N-shaped negative differential conductivity; S-shaped negative differential conductivity; localized direct transform; photoconductive semiconductor switches; Cathodes; Charge carrier density; Conductivity; Educational institutions; Gallium arsenide; Impact ionization; Insulation; Photoconducting devices; Photoconductivity; Switches; boundary conditions; localized transition region; negative differential conductivity (NDC);
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292628
Filename
5292628
Link To Document