Electronic potentiometer cell using a CMOS floating-gate memory

This paper describes the experimental design of an electronic potentiometer cell (e-pot) to provide reference voltages, using a CMOS floating-gate memory fabricated in 1.2 mum CMOS process. Attention is focus to the fact that the e-pot will be programming applying tunneling and injection hot electrons processes. It takes into account the long-term voltage storage as charge on the floating gate of a pMOS transistor, which is the core of the memory cell. Experimental results justifying these processes are also including. The circuit performs very well and can provide a reference voltage in the range that is nearly rail to rail.